參數(shù)資料
型號： IXTQ96N15P
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Preliminary Data Sheet
中文描述： 96 A, 150 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/5頁
文件大小： 586K
代理商： IXTQ96N15P
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
150
150
V
V
V
GSM
±
20
V
I
D25
I
D(RMS)
I
DM
I
AR
T
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
96
75
A
A
A
A
250
60
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
40
1.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
480
W
T
J
T
JM
T
stg
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-268
5.5
5.0
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99131C(05/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 150
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
24
m
PolarHT
TM
Power MOSFET
IXTQ 96N15P
IXTT 96N15P
V
DSS
I
D25
R
DS(on)
= 150 V
= 96 A
= 24
m
N-Channel Enhancement Mode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
G
DS
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Preliminary Data Sheet
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