參數(shù)資料
型號(hào): IXTH75N10
廠商: IXYS CORP
元件分類: JFETs
英文描述: IC ARM920T MCU 200MHZ 272-TFBGA
中文描述: 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 111K
代理商: IXTH75N10
4 - 4
2000 IXYS All rights reserved
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
V
DS
- Volts
1
10
100
I
D
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
G
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
S
0
25
50
75
100
125
150
V
DS
- Volts
0
5
10
15
20
25
C
0
1000
2000
3000
4000
5000
6000
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.01
0.1
D=0.2
D=0.02
D=0.01
D=0.5
D=0.1
D=0.05
Single pulse
C
oss
C
iss
10μs
100μs
1ms
10ms
100ms
V
DS
= 50V
I
D
= 37.5A
I
G
= 1mA
Limited by R
DS(on)
C
rss
T
J
= 125
°
C
T
J
= 25
°
C
f = 1MHz
V
DS
= 25V
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH75N10 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
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IXTH75N15 功能描述:MOSFET 75 Amps 150V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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