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參數(shù)資料
| 型號： | IXTP2N60P |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | PolarHV Power MOSFET |
| 中文描述： | 2 A, 600 V, 5.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 140K |
| 代理商： | IXTP2N60P |
2006 IXYS All rights reserved
G = Gate
S = Source
D = Drain
TAB = Drain
DS99422E(04/06)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 25
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
50
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
1
μ
A
μ
A
T
J
= 125
°
C
50
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
5.1
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-220 (IXTP)
D
(TAB)
G
S
IXTP 2N60P
IXTY 2N60P
V
DSS
I
D25
R
DS(on)
≤
5.1
= 500 V
= 2 A
Symbol
V
DSS
V
DGR
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Maximum Ratings
600
600
V
V
V
GSS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
2
4
A
A
I
AR
E
AR
E
AS
2
A
10
mJ
mJ
150
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 50
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
55
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-252 0.8 g
TO-220
4
g
TO-252 AA (IXTY)
G
S
(TAB)
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|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXTP2N80 | 功能描述:MOSFET 2 Amps 800V 6.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTP2N80P | 功能描述:MOSFET 2 Amps 800V 6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTP2N95 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 2A I(D) | TO-220AB |
| IXTP2N95A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 2A I(D) | TO-220AB |
| IXTP2P45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220 |
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