參數(shù)資料
型號： IXTP10N60PM
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV Power MOSFET
中文描述： 5 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 59K
代理商： IXTP10N60PM
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
Ω
600
600
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
5
A
A
30
10
20
A
mJ
mJ
500
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
Ω
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
50
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
4
g
DS99450E(04/06)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 100
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
5
μ
A
μ
A
T
J
= 125
°
C
50
R
DS(on)
V
= 10 V, I
D
= 5 A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
740 m
Ω
PolarHV
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTP 10N60PM
V
DSS
I
D25
R
DS(on)
≤
740 m
Ω
= 600 V
= 5 A
G = Gate
S = Source
D = Drain
Features
z
Plastic overmolded tab for electrical
isolation
z
International standard package
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
OVERMOLDED TO-220
(IXTP...M) OUTLINE
GDS
Isolated Tab
Preliminary Technical Information
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
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IXTP110N055T2 功能描述:MOSFET 110 Amps 55V 0.0066 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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