參數(shù)資料
型號： IXTP10N60PM
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV Power MOSFET
中文描述： 5 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 59K
代理商： IXTP10N60PM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
IXTP 10N60PM
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 5 A, pulse test 6 11
S
C
iss
C
oss
C
rss
1610
165
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
14
t
d(on)
t
r
t
d(off)
t
f
20
24
55
18
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 10 A
R
G
= 10
Ω
(External)
Q
g(on)
Q
gs
Q
gd
32
11
10
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 5 A
R
thJS
2.5
°
C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
10
A
I
SM
Repetitive
30
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= 9 A, -di/dt = 100 A/
μ
s
V
R
= 100V
500
ns
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
1
2
3
ISOLATED TO-220 (IXTP...M)
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
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