參數(shù)資料
型號： IXFC52N30P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHTTM HiPerFET Power MOSFET
中文描述： 24 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, ISOPLUS220, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 97K
代理商： IXFC52N30P
2003 IXYS All rights reserved
G = Gate
S = Source
D = Drain
TAB = Drain
DS99115A(04/05)
PolarHT
TM
HiPerFET
Power MOSFET
IXFC52N30P
I
D25
V
DSS
= 300 V
= 32 A
= 75 m
R
DS(on)
Advance Technical Information
N-Channel Enhancement Mode
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
65
75
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GSS
Continuous
V
GSM
±
20
±
30
V
V
Transient
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
32
A
A
150
52
A
30
1.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
V
ISOL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab 2500
300
°
C
V~
F
C
Mounting Force
11..65/2.5..15
N/lb
Weight
ISOPLUS220
2.0
g
ISOPLUS220
TM
(IXFC)
E153432
G
DS
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參數(shù)描述
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IXFC80N085 功能描述:MOSFET 80 Amps 85V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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