參數(shù)資料
型號： IXFE80N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs Single Die MOSFET
中文描述： 72 A, 500 V, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS227, 4 PIN
文件頁數(shù)： 1/2頁
文件大小： 81K
代理商： IXFE80N50
2002 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
500
V
2
4
V
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
=
I
T
Note 2
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
2
R
DS(on)
55
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
500
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C, Chip capability
T
C
= 25
°
C,
Note 1
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
72
A
320
A
80
A
64
mJ
6
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
580
W
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
19
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
D
S
G
S
IXFE 80N50
V
DSS
I
D25
R
DS(on)
= 55 m
= 500 V
= 72
A
Features
Conforms to SOT-227B outline
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Low cost
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
98898A (5/02)
Preliminary data sheet
ISOPLUS 227
TM
(IXFE)
S
G
S
D
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