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參數(shù)資料
| 型號： | IXFF24N100 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM |
| 中文描述： | 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | IXFF24N100 |
1 - 2
2000 IXYS All rights reserved
022
I
D25
V
DSS
= 1000 V
R
DSon
= 390 m
= 22 A
HiPerFET
TM
Power Mosfet
i
n High Voltage ISOPLUS I4-PAC
TM
Advanced Technical Information
IXFF 24N100
Features
HiPerFET
TM
technology
- low R
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
ISOPLUS I4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
switched mode power supplies
DC-DC converters
resonant converters
1
5
MOSFETs
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
1000
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
22
15
A
A
I
F25
I
F90
(diode) T
C
= 25°C
(diode) T
C
= 90°C
120
75
A
A
dv/dt
V
DS
< V
; I
F
100A; di
F
/dt
T
VJ
= 150°C
100A/μs; R
G
= 2
5
V/ns
E
AR
T
C
= 25°C
64
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
390 m
V
GSth
V
DS
= 20 V;
I
D
= 8 mA;
2.5
5
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.1 mA
0.25
mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
250
55
135
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
35
35
75
21
ns
ns
ns
ns
V
F
(diode) I
F
= 12 A;
V
GS
= 0 V
1.5
V
t
rr
(diode) I
F
= 24 A;
-di/dt = 100 A/μs; V
DS
= 100 V
250
ns
R
thJC
0.32 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
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|---|---|
| IXFF24N100_06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET |
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