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參數(shù)資料
| 型號(hào)： | IXFM10N100 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | TO-204AA, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IXFM10N100 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
10
12
A
A
A
A
A
A
A
A
A
12.5
40
48
50
10
12
12.5
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
2.0
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10N100
12N100
13N100
1.20
1.05
0.90
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Synchronous rectification
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
G
Low voltage relays
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
Space savings
G
High power density
D
G
V
DSS
1000 V
1000 V
1000 V 12.5 A 0.90
t
rr
250 ns
I
D25
10 A 1.20
12 A 1.05
R
DS(on)
IXFH/IXFM
10
N100
IXFH/IXFM
12
N100
IXFH
13
N100
HiPerFET
TM
Power MOSFETs
91531F(4/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
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