- 您現(xiàn)在的位置：買賣IC網 > PDF目錄383188 > IXDR30N120 (IXYS CORP) High Voltage IGBT with optional Diode ISOPLUSTM package PDF資料下載
參數資料
| 型號： | IXDR30N120 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT with optional Diode ISOPLUSTM package |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, ISOPLUS247, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | IXDR30N120 |
2000 IXYS All rights reserved
1 - 4
Features
NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
G
Epoxy meets UL 94V-0
G
Isolated and UL registered E153432
Advantages
DCB Isolated mounting tab
Meets TO-247AD package Outline
Package for clip or spring mounting
Space savings
High power density
Typical Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
ISOPLUS
TM
package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
Square RBSOA
IXDR 30N120 D1
IXDR 30N120
G
C
E
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 20 k
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 90°C, t
p
= 1 ms
50
30
60
A
A
A
RBSOA
V
= ±15 V, T
= 125°C, R
= 47
Clamped inductive load, L = 30 mH
I
CM
= 50
V
CEK
CES
A
t
(SCSOA)
V
GE
= ±15 V, V
= V
, T
J
= 125°C
R
G
= 47 , non repetitive
10
μs
P
C
T
C
= 25°C
IGBT
Diode
200
95
W
W
T
J
T
stg
-55 ... +150
-55 ... +150
°C
°C
V
ISOL
50/60 Hz, RMS I
ISOL
1 mA
2500
V~
Weight
6
g
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 1 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25°C
T
J
= 125°C
1.5 mA
2.5
mA
I
GES
V
CE
= 0 V, V
GE
= ±
20 V
± 500
nA
V
CE(sat)
I
C
= 30 A, V
GE
= 15 V
2.4
2.9
V
V
CES
I
C25
V
CE(sat) typ
= 2.4 V
= 1200 V
= 50 A
GC
E
G = Gate
C = Collector
E = Emitter
*Patent pending
Isolated Backside*
IXDR 30N120
IXDR 30N120 D1
ISOPLUS 247
TM
E153432
E
C
G
相關PDF資料 |
PDF描述 |
|---|---|
| IXDR30N120D1 | High Voltage IGBT with optional Diode ISOPLUSTM package |
| IXEN60N120 | NPT IGBT |
| IXEN60N120D1 | NPT IGBT |
| IXER35N120D1 | NPT3 IGBT with Diode |
| IXER60N120 | NPT3 IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXDR30N120D1 | 功能描述:IGBT 晶體管 30 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXDR35N60BD1 | 功能描述:IGBT 晶體管 35 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXDR502D1B | 功能描述:功率驅動器IC 2 Amps V 4 Rds RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXDS430 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver |
| IXDS430SI | 功能描述:功率驅動器IC 30 Amps SelectableV 0.4 Rds RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。