- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383188 > IXER60N120 (IXYS CORP) NPT3 IGBT PDF資料下載
參數(shù)資料
| 型號： | IXER60N120 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | NPT3 IGBT |
| 中文描述： | 95 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 54K |
| 代理商： | IXER60N120 |
1 - 2
2002 IXYS All rights reserved
2
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
ISOPLUS 247
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
single switches
and with complementary free wheeling
diodes
choppers
phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
95
60
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 22
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
100
V
CES
A
t
(SCSOA)
V
= 900 V; V
GE
=
±
15 V; R
G
= 22
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
375
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 60 A; V
GE
= 15 V; T
VJ
= 25°C
2.1
2.5
2.7
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 2 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.1
mA
mA
0.1
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
150
60
700
50
7.2
6.0
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
3.8
500
nF
nC
R
thJC
R
thJH
0.33 K/W
0.66
K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 60 A
V
GE
= ±15 V; R
G
= 22
I
C25
V
CES
V
CE(sat) typ.
= 2.1 V
= 95 A
= 1200 V
NPT
3
IGBT
in ISOPLUS 247
TM
Advanced Technical Information
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXER 60N120
E
C
G
GC
E
G = Gate
C = Collector
E = Emitter
*Patent pending
Isolated Backside*
ISOPLUS 247
TM
E153432
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFA4N100Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻3.0Ω的N溝道增強型HiPerFET功率MOSFET) |
| IXFC15N80Q | HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface |
| IXFC24N50 | HiPerFET MOSFETs ISOPLUS220 |
| IXFC26N50 | HiPerFET MOSFETs ISOPLUS220 |
| IXFC52N30P | PolarHTTM HiPerFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXER60N120_06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:NPT3 IGBT in ISOPLUS 247 |
| IXF | 制造商:ILSI 制造商全稱:ILSI America LLC 功能描述:Crystal Filter 3 Lead Metal Package |
| IXF1002A8B_DAB6 WAF | 制造商:Rochester Electronics LLC 功能描述: |
| IXF1002AQ8B DIE UP ENG | 制造商:Rochester Electronics LLC 功能描述: |
| IXF1002AQ8B WAF ENG | 制造商:Rochester Electronics LLC 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。