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參數(shù)資料
| 型號： | ITT3107BD |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SO-16 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 223K |
| 代理商： | ITT3107BD |
4.8V 3.0W RF Power Amplifier IC for GSM
ITT3107BD
PRELIMINARY
Preliminary Data - Specifications Subject to Change Without Notice
901788 D, February 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel:
1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
4
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
1.5
2.5
3.5
4.5
5.5
6.5
7.5
VDD, Supply Voltage
P
OUT
(dBm),
and
η
(%)
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
V
GG
,Gate
Bias
= 897 MHz
PIN = 0 dBm
VGG
η
POUT
-20
-10
0
10
20
30
40
ο
2ο
3ο
4ο
5ο
Frequency
P
OUT
,Output
Power
(dBm)
= 897 MHz
VDD = 4.8 V
PIN = 0 dBm
Figure 6. Output Power, Efficiency and Control
Voltage vs. Supply Voltage
Figure 7. Harmonics
Conditions for Figure 6: Control Voltage (VGG) is adjusted
at each supply voltage to maintain 3.0 W output power.
MECHANICAL DATA
0
0.2
0.5
1
180
170
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
825 MHz
975 MHz
897 MHz
4.9 - j8.4
Figure 8. Output match impedance (as seen from
pin 12)
Figure 9. Component layout and printed circuit
drawing for evaluation board (top view)
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