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參數資料
| 型號： | ITT3107BD |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SO-16 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 223K |
| 代理商： | ITT3107BD |
4.8V 3.0W RF Power Amplifier IC for GSM
ITT3107BD
PRELIMINARY
Preliminary Data - Specifications Subject to Change Without Notice
901788 D, February 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel:
1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
1
GND
V
GG3
V
GG3
GND
RF
OUT / VDD3
16 pin narrow body SOIC
GND
V
DD2
GND
V
GG1,2
V
GG1,2
GND
RF
IN
GND
V
DD1
GND
Typical 4.8 Volt Performance
34.8 dBm Power Output
34.8 dB Power Gain
45% Power Added Efficiency
All Harmonics < -40 dBc
MAXIMUM RATINGS (T
A = 25 °C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage (Pins 8, 9, 12)
VDD
10
Vdc
DC Gate Bias Voltage (Pins 1, 2, 15, 16)
VGG
-5
Vdc
RF Input Power
PIN
10
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-40 to +150
°C
ELECTRICAL CHARACTERISTICS V
DD=4.8 V, PIN=0 dBm, TS=40 °C (Note 1), Input and output externally matched to 50
System.
Characteristic
Symbol
Typical
Unit
Frequency Range
880 to 915
MHz
Output Power (VGG adjusted for desired output power)
POUT
3.0
W
Power Gain (POUT = 34.8 dBm)
GP
34.8
dB
Power Added Efficiency (POUT = 34.8 dBm)
η
45
%
Harmonics (POUT = 34.8 dBm)
2o
3o
47
42
dBc
Input VSWR (POUT = 34.8 dBm), 50
Ref.
—
1.3:1
—
Thermal Resistance (Junction of 3
rd stage FET to solder point of pin 11)
RTH J-S
18
°C/W
Load Mismatch (VDD = 7.5V, VSWR = 10:1, PIN = +3 dBm)
—
No Degradation in Power Output
Stability (PIN = -3 to +3 dBm, VDD = 0 to 7.5 V, POUT < 34.8 dBm, TS = -40 to +100
°C,
Load VSWR = 10:1)
—
All non-harmonically related outputs
more than 70 dB below desired signal
Note 1:
TS is the temperature measured at the soldering point of pin 11, mounted on 60 mil GETEK evaluation board in a free air condition with ambient
room temperature TA=25 °C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 and 9, under room
temperature conditions and pulsed according to the GSM system specification.
Features
Class AB Bias
825 to 975 MHz Operation
Single Element Output Match
Small Size — 16 Pin Narrow Body SOIC Plastic Package
Self-Aligned MSAG
-Lite MESFET Process
Guaranteed Stability and Ruggedness
Applications
GSM Cellular Telephones
Wireless Modems
900 MHz ISM
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