參數(shù)資料
型號： IXFN64N50PD2
廠商： IXYS CORP
元件分類： JFETs
中文描述： 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁數(shù)： 1/5頁
文件大小： 145K
代理商： IXFN64N50PD2
2009 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
500
V
V
GSS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C = 25°C50
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
200
A
I
A
T
C = 25°C64
A
E
AS
T
C = 25°C
2.5
J
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤150°C
10
V/ns
P
D
T
C = 25°C
625
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting Torque
1.5/13
Nm/lb.in.
Terminal Connection Torque
1.3/11.5
Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 500μA
500
V
V
GS(th)
V
DS = VGS, ID = 8mA
3.0
5.5
V
I
GSS
V
GS = ± 30V, VDS = 0V
± 200 nA
I
DSS
V
DS = VDSS, VGS= 0V
50
μA
T
J = 125°C
1 mA
R
DS(on)
V
GS = 10V, ID = 32A, Note 1
85 m
Ω
PolarHVTM HiPerFET
Power MOSFET
Boost & Buck Configurations
(Ultra-fast FRED Diode)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN64N50PD2
IXFN64N50PD3
V
DSS
= 500V
I
D25
= 50A
R
DS(on) ≤
≤≤≤≤ 85m
Ω
t
rr
≤≤≤≤≤ 200ns
DS99507F(4/09)
Features
Fast Intrinsic Diode in Boost
Configuration
International Standard Package
Encapsulating Epoxy Meets
UL 94 V-0, Flammability Classification
miniBLOC with Aluminium Nitride
Isolation
Avalanche Rated
Low Package Inductance
Advantages
Easy To Mount
Space Savings
Tightly Coupled FRED Diode
High Power Density
Applications
PFC Circuits
Uninterruptible Power Supplies (UPS)
Switched-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
High Speed Power Switching
Applications
Robotics and Servo Controls
2
1
4
3
D2
D3
2
1
4
3
2
3
1
4
miniBLOC, SOT-227 B
E153432
D2 Pin Out:
1 = Source
3 = Drain / Diode anode
2 = Gate
4 = Diode cathode
D3 Pin Out:
1 = Source / Diode Cathode 2 = Gate
3 = Drain
4 = Diode cathode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN64N50PD3 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:PolarHV HiPerFET Power MOSFET
IXFN64N60P 功能描述:MOSFET 600V 64A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN66N50Q2 功能描述:MOSFET 66 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN70N60Q2 功能描述:MOSFET 70 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN72N55Q2 功能描述:MOSFET 72 Amps 550 V 0.07 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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