參數(shù)資料
型號(hào): IS41LV44004-50JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, SOJ-24
文件頁數(shù): 14/19頁
文件大?。?/td> 157K
代理商: IS41LV44004-50JI
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/24/01
IS41C4400X
IS41LV4400X SERIES
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
VCC
Supply Voltage
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
0 to +70
°C
Industrial Operation Temperature
-40 to +85
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
4.5
5.0
5.5
V
3.3V
3.0
3.3
3.6
VIH
Input High Voltage
5V
2.4
VCC + 1.0
V
3.3V
2.0
VCC + 0.3
VIL
Input Low Voltage
5V
–1.0
0.8
V
3.3V
–0.3
0.8
TA
Commercial Ambient Temperature
0
70
°C
Industrial Ambient Temperature
-40
85
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A10(A11)
5
pF
CIN2
Input Capacitance:
RAS, CAS, WE, OE
7pF
CIO
Data Input/Output Capacitance: I/O0-I/O3
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
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