參數(shù)資料
型號: IRS21952SPBF
廠商: International Rectifier
英文描述: HIGH SIDE & DUAL LOW SIDE DRIVER IC
中文描述: 高壓側
文件頁數(shù): 3/17頁
文件大?。?/td> 205K
代理商: IRS21952SPBF
IRS21952SPBF
3
Static Electrical Characteristics
(VB-VS)=15 V. The V
IN
, V
IN,TH
, V
BSUV
, V
O
, I
O
and I
IN
parameters are referenced to V
S
. T
A
= 25
o
C unless otherwise
specified.
Symbol
Definition
Min
Typ
Max Units
Test Conditions
V
CCUV+
V
CC
supply undervoltage positive going threshold
7.5
8.6
9.7
V
CCUV-
V
CC
supply undervoltage negative going threshold
7.0
8.2
9.4
V
BSUV+
V
BS
supply undervoltage positive going threshold
V
BSUV-
V
BS
supply undervoltage negative going threshold
V
DDUV+
V
DD
supply undervoltage positive going threshold
V
DDUV-
V
DD
supply undervoltage negative going threshold
I
LKVCC
I
LKVBS
and output well
I
QBS
Quiescent V
BS
supply current
7.5
8.6
9.7
7.0
8.2
9.4
3.3
4.1
4.9
2.9
3.7
4.5
V
Offset supply leakage current – both input well
---
---
50
V
B
= V
S
= 600 V
V
CC
= V
COM
= 600 V
---
70
140
I
QDD
I
QCC
V
IH
V
IL
Quiescent V
DD
supply current
---
140
280
Quiescent V
CC
supply current
---
200
400
μA
VIN = 0 V or 5 V
Logic “1” input voltage
3.5
---
---
Logic “0” input voltage
---
---
0.6
V
OH
High level output voltage, V
BIAS
-V
O
---
---
0.1
I
o
= 0 A
V
OL
Low level output voltage, V
O
---
---
0.1
V
I
o
= 0 A
I
IN+
Logic “1” input bias current
---
2
10
VIN = 5 V
I
IN-
Logic “0” input bias current
---
---
5
μA
VIN = 0 V
I
o+
Output high short circuit pulsed current
---
0.5
---
V
O
=0 V,V
IN
=0 V,
PW<=10 μs
V
O
=15 V,V
IN
=5 V,
PW<=10 μs
I
o-
Output low short circuit pulsed current
---
0.5
---
A
相關PDF資料
PDF描述
IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (&#176;C): 0 to 70; Package: TSOPII (44); Status: &#160; Remarks: &#160;
IRS21953SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
IRS2308 HALF-BRIDGE DRIVER
IRS2308PbF HALF-BRIDGE DRIVER
IRS2308S Fast SRAM &gt; Network SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 18M; Supply voltage (V): 3.135 to 3.465; Operating temperature (&#176;C): 0 to 70; Package: TQFP (100)
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