參數(shù)資料
型號(hào): IRS21952SPBF
廠商: International Rectifier
英文描述: HIGH SIDE & DUAL LOW SIDE DRIVER IC
中文描述: 高壓側(cè)
文件頁(yè)數(shù): 11/17頁(yè)
文件大?。?/td> 205K
代理商: IRS21952SPBF
IRS21952SPBF
11
0
100
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400
-50
-25
0
25
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75
100
125
Temperature (
o
C)
V
B
Figure 11A. V
BS
Supply Current
vs. Temperature
Typ.
Max.
0
100
200
300
400
10
12
14
16
18
20
V
BS
Supply Voltage (V)
V
B
Figure 11B. V
BS
Supply Current
vs. Supply Voltage
Typ.
Max.
0
200
400
600
800
1000
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
c
Figure 12A. V
CC
Supply Current
vs. Temperature
Max.
Typ.
0
200
400
600
800
1000
10
12
14
16
18
20
V
cc
Supply Voltage (V)
Figure 12B. V
CC
Supply Current
vs. Supply Voltage
V
c
Max.
Typ.
0
100
200
300
400
500
600
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
D
Figure 13A. V
Supply Current
vs. Temperature
Max.
Typ.
0
100
200
300
400
500
600
10
12
14
16
18
20
V
DD
Supply Voltage (V)
Figure 13B. V
DD
Supply Current
vs. Supply Voltage
V
D
Max.
Typ.
相關(guān)PDF資料
PDF描述
IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21953SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
IRS2308 HALF-BRIDGE DRIVER
IRS2308PbF HALF-BRIDGE DRIVER
IRS2308S Fast SRAM > Network SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 18M; Supply voltage (V): 3.135 to 3.465; Operating temperature (°C): 0 to 70; Package: TQFP (100)
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