參數(shù)資料
型號: IRS21952SPBF
廠商: International Rectifier
英文描述: HIGH SIDE & DUAL LOW SIDE DRIVER IC
中文描述: 高壓側(cè)
文件頁數(shù): 2/17頁
文件大?。?/td> 205K
代理商: IRS21952SPBF
IRS21952SPBF
2
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM.
Symbol
Definition
HIN
LIN1
LIN2
VDD
Floating logic input supply voltage
VSS
Floating logic input supply return voltage
VB
High side floating well supply voltage
VS
High side floating well supply return voltage
HO
High side floating gate drive output voltage
VCC
Low side supply voltage
LO1
LO2
dVS/dt
Allowable VS offset transient relative to earth ground
dVSS/dt
Allowable VSS offset transient relative to earth ground
P
D
Package power dissipation @ T
A
<=+25 oC
R
θ
JA
Thermal resistance, junction to ambient
T
J
Junction temperature
T
S
Storage temperature
T
L
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM.
Symbol
Definition
HIN
LIN1
LIN2
VDD
Floating logic input supply voltage
VSS
Floating logic input supply return voltage
VB
High side floating well supply voltage
VS
High side floating well supply return voltage
HO
High side floating gate drive output voltage
VCC
Low side supply voltage
LO1
LO2
T
A
Ambient temperature
Note 1:
Logic operation for V
S
of –5 V to 600 V. Logic state held for V
S
of –5 V to –V
BS
. (Please refer to Design Tip
DT97-3 for more details).
Min
Max
Units
Floating logic level input voltage
VSS-0.3
VDD+0.3
-0.3
VDD-25
-0.3
VB-25
VS-0.3
-0.3
625
VDD+0.3
625
VB+0.3
VB+0.3
25
Low side output voltage
-0.3
VCC+0.3
V
-
-
-
-
50
50
1
100
150
150
300
V/ns
V/ns
W
oC/W
oC
oC
oC
-55
-55
-
Min
Max
Units
Floating logic level input voltage
VSS
VDD
VSS+4.5
-5
VS+10
-5
VS
10
VSS+5.5
600
VS+20
600
VB
20
Low side output voltage
0
VCC
V
-40
125
oC
相關(guān)PDF資料
PDF描述
IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (&#176;C): 0 to 70; Package: TSOPII (44); Status: &#160; Remarks: &#160;
IRS21953SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
IRS2308 HALF-BRIDGE DRIVER
IRS2308PbF HALF-BRIDGE DRIVER
IRS2308S Fast SRAM &gt; Network SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 18M; Supply voltage (V): 3.135 to 3.465; Operating temperature (&#176;C): 0 to 70; Package: TQFP (100)
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