參數(shù)資料
型號(hào): IRS21952SPBF
廠商: International Rectifier
英文描述: HIGH SIDE & DUAL LOW SIDE DRIVER IC
中文描述: 高壓側(cè)
文件頁(yè)數(shù): 13/17頁(yè)
文件大?。?/td> 205K
代理商: IRS21952SPBF
IRS21952SPBF
13
6
7
8
9
10
11
12
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
c
Figure 16. Vcc Undervoltage Threshold (+)
vs. Temperature
Max.
Typ.
Min.
6
7
8
9
10
11
12
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
c
Figure 17. V
CC
Undervoltage Threshold (-)
vs. Temperature
Max
Typ.
Min.
6
7
8
9
10
11
12
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
B
Figure 18. V
BS
Undervoltage Threshold (+)
Max.
Typ.
Min.
6
7
8
9
10
11
12
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
B
Figure 19. V
BS
Undervoltage Threshold (-)
vs. Temperature
Max
Typ.
Min.
1.00
2.00
3.00
4.00
5.00
6.00
7.00
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
D
U
Figure 20. V
DD
Undervoltage Threshold (+)
vs. Temperature
Max.
Typ.
Min.
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
Temperature (
o
C)
V
D
Figure 21. V
DD
Undervoltage Threshold (-)
vs. Temperature
Max.
Typ.
Min.
相關(guān)PDF資料
PDF描述
IRS21952STRPBF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21953SPBF HIGH SIDE & DUAL LOW SIDE DRIVER IC
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IRS2308S Fast SRAM > Network SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 18M; Supply voltage (V): 3.135 to 3.465; Operating temperature (°C): 0 to 70; Package: TQFP (100)
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