參數(shù)資料
型號： IRS21271PbF
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述： 電流傳感單通道驅(qū)動
文件頁數(shù)： 3/21頁
文件大小： 372K
代理商： IRS21271PBF
www.irf.com
3
IRS212(7, 71, 8, 81)(S)PbF
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage (IRS2127/IRS21271)
Logic “0” input voltage (IRS2128/IRS21281)
Logic “0” input voltage (IRS2127/IRS21271)
Logic “1” input voltage (IRS2128/IRS21281)
CS input positive (IRS2127/IRS2128)
going threshold (IRS21271/IRS21281)
V
IL
V
CSTH+
180 250
320 mV
1.5
1.8 2.1
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
CS+
I
CS-
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
—
0.05 0.2
—
0.02 0.1
—
— 50 V
B
= V
S
= 600 V
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
—
30
0
8
00
—
60 120
—
7.0 15 μA
V
IN
= 5 V
Logic “0” input bias current
—
— 5.0 V
IN
= 0 V
— 5.0 V
CS
= 3 V
— 5.0 V
CS
= 0 V
10.3 11.8
7.2 8.2
V
“High” CS bias current
—
“High” CS bias current
—
V
BSUV+
V
BS
supply undervoltage (IRS2127/IRS2128)
positive going threshold (IRS21271/IRS21281)
V
BS
supply undervoltage (IRS2127/IRS2128)
negative going threshold (IRS21271/IRS21281)
8.8
6.3
V
BSUV-
7.5
6.0
9.0 10.6
6.8 7.7
I
O+
Output high short circuit pulsed current
200
2
9
0 —
V
O
= 0 V, V
IN
= 5 V
PW
≤
10 μs
V
O
= 15 V, V
IN
= 0 V
PW
≤
10 μs
I
O-
Output low short circuit pulsed current
420
600
—
Ron,
FLT
FAULT - low on resistance
—
125
—
Symbol
t
on
t
off
t
r
t
f
t
bl
t
cs
t
flt
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V and T
A
= 25 °C unless otherwise specified. The V
IN
, V
TH,
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
Definition
Min.
—
Typ. Max. Units Test Conditions
150
200
Turn-on propagation delay
V
S
= 0 V
V
S
= 600 V
Turn-off propagation delay
—
150
200
Turn-on rise time
—
80
130
Turn-off fall time
—
40
65
ns
Start-up blanking time
550
750
950
CS shutdown propagation delay
—
65
360
CS to FAULT pull-up propagation delay
—
270
510
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, C
L
= 1000 pF and T
A
= 25 °C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Fig. 3.
2.5 — —
V
IN
= 0 V or 5 V
mA
V
— — 0.8 V
CC
= 10 V to 20 V
I
O
= 2 mA
V
相關(guān)PDF資料
PDF描述
IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS2127PbF CURRENT SENSING SINGLE CHANNEL DRIVER
IRS2127SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21281PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
IRS21281SPbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS21271SPBF 功能描述:功率驅(qū)動器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS21271STRPBF 功能描述:功率驅(qū)動器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127PBF 功能描述:功率驅(qū)動器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127SPBF 功能描述:功率驅(qū)動器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127STRPBF 功能描述:功率驅(qū)動器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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