參數(shù)資料
型號(hào)： IRS21271PbF
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述： 電流傳感單通道驅(qū)動(dòng)
文件頁(yè)數(shù)： 1/21頁(yè)
文件大小： 372K
代理商： IRS21271PBF
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage dV/dt immune
Application-specific gate drive range:
Motor Drive: 12 V to 20 V (IRS2127/IRS2128)
Automotive: 9 V to 20 V (IRS21271/IRS21281)
Undervoltage lockout
3.3 V, 5 V, and 15 V input logic compatible
FAULT lead indicates shutdown has occured
Output in phase with input (IRS2127/IRS21271)
Output out of phase with input (IRS2128/IRS21281)
RoHS compliant
CURRENT SENSING SINGLE CHANNEL DRIVER
V
OFFSET
600 V max.
I
O
+/-
200 mA / 420 mA
V
OUT
12 V - 20V 9 V - 20 V
(IRS2127/IR2128) (IRS21271/IR21281)
V
CSth
250 mV or 1.8 V
t
on/off
(typ.)
15
0 ns & 150 ns
Typical Connection
www.irf.com
1
Packages
IRS2127/IRS21271
IRS2128/IRS21281
8-Lead PDIP
8-Lead SOIC
IRS212(7, 71, 8, 81)(S)PbF
Data Sheet No. PD
60299
Description
The IRS2127/IRS2128/IRS21271/IRS21281 are
high voltage, high speed power MOSFET and IGBT
drivers. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construc-
tion. The logic input is compatible with standard
CMOS or LSTTL outputs, down to 3.3 V. The protec-
tion circuity detects over-current in the driven power
transistor and terminates the gate drive voltage. An
open drain FAULT signal is provided to indicate that
an over-current shutdown has occurred. The output
driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating chan-
nel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which
operates up to 600 V.
Product Summary
V
CC
IN
V
B
HO
CS
V
S
COM
FAULT
V
CC
IN
FAULT
V
CC
IN
V
B
HO
CS
V
S
COM
FAULT
V
CC
IN
FAULT
(Refer to Lead Assignments for correct pin configuration).
These diagrams show electrical connections only. Please
refer to our Application Notes and DesignTips for proper
circuit board layout.
相關(guān)PDF資料
PDF描述
IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS2127PbF CURRENT SENSING SINGLE CHANNEL DRIVER
IRS2127SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21281PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
IRS21281SPbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS21271SPBF 功能描述:功率驅(qū)動(dòng)器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS21271STRPBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127PBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127SPBF 功能描述:功率驅(qū)動(dòng)器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127STRPBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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