參數(shù)資料
型號(hào)： IRS21271PbF
廠商： International Rectifier
英文描述： Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
中文描述： 電流傳感單通道驅(qū)動(dòng)
文件頁數(shù)： 2/21頁
文件大小： 372K
代理商： IRS21271PBF
IRS212(7, 71, 8, 81)(S)PbF
www.irf.com
2
Symbol
Definition
Min.
Max.
Units
V
B
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
dV
s
/dt
High-side floating supply voltage
-0.3
625
High-side floating offset voltage
V
B
- 25
V
S
- 0.3
-0.3
V
B
+ 0.3
V
B
+ 0.3
25
High-side floating output voltage
Logic supply voltage
V
Logic input voltage
-0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
B
+ 0.3
50
FAULT output voltage
-0.3
Current sense voltage
V
S
- 0.3
—
Allowable offset supply voltage transient
V/ns
P
D
Package power dissipation @ T
A
≤
+25 °C
8-Lead DIP
—
1.0
8-Lead SOIC
—
0.625
Rth
JA
Thermal resistance, junction to ambient
8-Lead DIP
—
125
8-Lead SOIC
—
200
T
J
T
S
T
L
Junction temperature
—
150
Storage temperature
-55
150
Lead temperature (soldering, 10 seconds)
—
300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
V
B
High-side floating supply voltage (IRS2127/IRS2128)
(IRS21271/IRS21281)
V
S
+ 12
V
S
+ 9
Note 1
V
S
+ 20
V
S
+ 20
600
V
S
V
HO
V
CC
V
IN
V
FLT
V
CS
T
A
High-side floating offset voltage
High-side floating output voltage
V
S
10
V
B
20
Logic supply voltage
Logic input voltage
0
0
V
CC
V
CC
V
S
+ 5
125
FAULT output voltage
Current sense signal voltage
V
S
-40
Ambient temperature
°C
Note 1: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15 V differential.
°C/W
W
°C
V
相關(guān)PDF資料
PDF描述
IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS2127PbF CURRENT SENSING SINGLE CHANNEL DRIVER
IRS2127SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
IRS21281PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
IRS21281SPbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRS21271SPBF 功能描述:功率驅(qū)動(dòng)器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS21271STRPBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127PBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127SPBF 功能描述:功率驅(qū)動(dòng)器IC 600V CURRENT SENSING 1 CH DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2127STRPBF 功能描述:功率驅(qū)動(dòng)器IC Cur Sens 1Ch Drvr 600V Gt Drv 12-20V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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