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參數(shù)資料
| 型號(hào)： | IRLU8113PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 270K |
| 代理商： | IRLU8113PBF |
8
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Control FET
!"
%& !"#
# $
#'
P
loss
= P
conduction
+ P
switching
+ P
drive
+ P
output
This can be expanded and approximated by;
(
)
P
loss
=
I
rms
2
×
R
ds(on)
+
I
×
Q
gd
(
i
g
×
V
in
×
f
+
I
×
Q
gs2
i
g
×
V
in
×
f
+
Q
g
×
V
g
×
f
)
+
Q
oss
2
×
V
in
×
f
"(
%& !"
%&
!"
"
)
#
*
%+
%& !"#
# ,
#
-
.
#
/
#
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss
=
P
conduction
+
P
drive
+
P
output
(
+
Q
g
×
V
g
×
f
(
Q
oss
2
*
P
loss
=
I
rms
2
×
R
ds(on)
)
+
×
V
in
×
f
+
Q
rr
×
V
in
×
f
(
)
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
and re-
verse recovery charge Q
both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
/Q
must be minimized to reduce the
potential for Cdv/dt turn on.
Power MOSFET Selection for Non-Isolated DC/DC Converters
Figure A: Q
oss
Characteristic
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU8113PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLU8203 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLU8203PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET PWR MOSFET 6.8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU8256PBF | 功能描述:MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU8259PBF | 功能描述:MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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