參數(shù)資料
型號(hào)： IRLU8113PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/11頁(yè)
文件大小： 270K
代理商： IRLU8113PBF
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
21
–––
4.8
6.0
5.8
7.4
–––
2.25
-5.6
–––
–––
1.0
–––
150
–––
100
–––
-100
–––
–––
22
32
6.1
–––
1.7
–––
6.8
–––
7.4
–––
8.5
–––
14
–––
9.2
–––
3.8
–––
15
–––
10
–––
2920
–––
610
–––
260
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 16
nC
ns
pF
Parameter
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
94
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
380
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
33
30
1.0
49
45
V
ns
nC
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
Conditions
8.9
Max.
145
13
= 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 175°C
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 12A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
–––
Typ.
–––
–––
V
GS
= 0V
V
DS
= 15V
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