參數(shù)資料
型號(hào): IRLU7843CPbF
廠(chǎng)商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 3/11頁(yè)
文件大小: 309K
代理商: IRLU7843CPBF
www.irf.com
3
Fig 4.
Normalized On-Resistance
vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID
(
)
TJ = 25°C
TJ = 175°C
VDS = 15V
20μs PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RD
ID = 30A
VGS = 10V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
2.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
2.5V
20μs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
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