參數(shù)資料
型號(hào)： IRLR8103VPBF
廠商： International Rectifier
英文描述： N-Channel Application-Specific MOSFETs
中文描述： N溝道特定應(yīng)用MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 215K
代理商： IRLR8103VPBF
DEVICE CHARACTERISTICS
12/0604
D-Pak
IRLR8103VPbF
www.irf.com
1
S
D
G
PD - 95093A
IRLR8103V
7.9 m
27 nC
12 nC
R
DS(on)
Q
G
Q
SW
Q
OSS
29nC
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Units
Continuous Drain or Source Current TC = 25°C
(V
GS
> 10V)
Pulsed Drain Current
TC= 90°C
I
DM
TC = 25°C
TC = 90°C
T
J
, T
STG
I
S
I
SM
°C
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
A
V
A
I
D
P
D
W
IRLR8103V
30
±20
91
63
363
91
363
115
60
-55 to 150
Power Dissipation
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Drain-Source Voltage
Gate-Source Voltage
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
100% R
Tested
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q
& R
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
相關(guān)PDF資料
PDF描述
IRLR8113PBF HEXFET Power MOSFET
IRLU8113PBF HEXFET Power MOSFET
IRLR8721PBF HEXFET Power MOSFET
IRLU8721PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
IRLR9343PBF DIGITAL AUDIO MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR8103VTR 制造商:International Rectifier 功能描述:MOSFET, 30V, 89A, 9 mOhm, 27 nC Qg, Logic Level, D-Pak
IRLR8103VTRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R
IRLR8103VTRL 功能描述:MOSFET N-CH 30V 91A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLR8103VTRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R
IRLR8103VTRLPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*