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參數(shù)資料
| 型號： | IRLR8103VPBF |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Application-Specific MOSFETs |
| 中文描述： | N溝道特定應(yīng)用MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 215K |
| 代理商： | IRLR8103VPBF |
www.irf.com
2
IRLR8103VPbF
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-Source
Symbol Min
BV
DSS
R
DS(on)
Typ Max Units
–––
–––
6.9
9.0
30
–––
V
On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
–––
1.0
–––
7.9
–––
–––
10.5
3.0
50
V
GS(th)
I
DSS
V
μA
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
27
23
4.7
2.0
9.7
12
29
–––
10
9
24
18
2672
1064
109
20
100
±100
–––
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Charge
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
SW
Q
OSS
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nA
Symbol Min
V
SD
Q
rr
Typ Max Units
–––
–––
0.9
103
1.3
–––
V
nC
Reverse Recovery Charge
(with Parallel Schottky)
Q
rr(s)
–––
96
–––
nC
V
GS
= 5V, I
D
= 15A, V
DS
= 16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0, T
J
= 100°C
V
GS
= ± 20V
V
DD
= 16V
I
D
= 15A
V
GS
= 5.0V
Clamped Inductive Load
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
Conditions
di/dt = 700A/μs , (with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
F
= 15A
di/dt ~ 700A/μs
V
DS
= 16V, V
GS
= 0V, I
F
= 15A
IS = 15A , V
GS
= 0V
nC
m
μA
V
DS
= 16V, V
GS
= 0
V
DS
= 16V, I
D
= 15A
ns
pF
V
GS
= 16V, V
GS
=0
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