參數(shù)資料
型號(hào)： IRGP4068DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
中文描述： 絕緣柵雙極晶體管的超低壓變頻二極管感應(yīng)加熱與軟交換應(yīng)用
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 336K
代理商： IRGP4068DPBF
IRGP4068DPbF/IRGP4068D-EPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10
.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.65
2.0
2.05
—
-21
32
1.0
450
0.96
0.81
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 100μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
2.14
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
—
S
V
CE
= 50V, I
C
= 48A, PW = 80μs
150
μA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1.05
V
I
F
= 8.0A
0.86
I
F
= 8.0A, T
J
= 150°C
±100
nA
V
GE
= ±20V
Ref.Fig
CT6
CT6
4,5,6
V
CE(on)
Collector-to-Emitter Saturation Voltage
8,9,10
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
8,9
10,11
V
FM
Diode Forward Voltage Drop
7
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
Min.
—
—
—
Typ.
95
28
35
Max. Units
140
42
53
Ref.Fig
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
, L = 200μH,T
J
= 25°C
18
nC
CT1
E
off
Turn-Off Switching Loss
—
1275
1481
μJ
CT4
Energy losses include tail
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
, L = 200μH,T
J
= 25°C
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
, L = 200μH,T
J
= 175°C
t
d(off)
t
f
Turn-Off delay time
Fall time
—
—
145
35
176
46
μJ
E
off
Turn-Off Switching Loss
—
1585
—
μJ
CT4
Energy losses include tail
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
=10
, L=200μH, T
J
= 175°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
V
CC
= 480V, Vp =600V
Rg = 10
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 10
, V
GE
= +15V to 0V
t
d(off)
t
f
C
ies
C
oes
C
res
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
165
45
3025
245
90
—
—
—
—
—
μJ
WF1
17
pF
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
16, CT3
WF2
Conditions
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