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參數(shù)資料
| 型號： | IRFZ44VZ |
| 元件分類： | JFETs |
| 英文描述： | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 301K |
| 代理商： | IRFZ44VZ |
IRFZ44VZS_L
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.061
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
9.6
12
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
25
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Qg
Total Gate Charge
–––
43
65
Qgs
Gate-to-Source Charge
–––
11
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
–––
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
62
–––
td(off)
Turn-Off Delay Time
–––
35
–––
ns
tf
Fall Time
–––
38
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1690
–––
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
Coss
Output Capacitance
–––
1870
–––
Coss
Output Capacitance
–––
260
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
57
(Body Diode)
A
ISM
Pulsed Source Current
–––
230
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 48V, = 1.0MHz
VGS = 0V, VDS = 0V to 48V
f
VGS = 10V
e
VDD = 30V
ID = 34A
RG = 12
TJ = 25°C, IS = 34A, VGS = 0V e
TJ = 25°C, IF = 34A, VDD = 30V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A
e
VDS = VGS, ID = 250A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 34A
ID = 34A
VDS = 48V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
S
D
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ44VZL | 功能描述:MOSFET N-CH 60V 57A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ44VZLPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
| IRFZ44VZPBF | 功能描述:MOSFET MOSFT 60V 57A 12mOhm 43nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44VZS | 功能描述:MOSFET N-CH 60V 57A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ44VZSHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 57A 3PIN D2PAK - Bulk |
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