參數(shù)資料
型號(hào)： IRF9150
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述： 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 57K
代理商： IRF9150
5-23
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
1
10
1
10
μ
s
100
μ
s
1ms
10ms
DC
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
100
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
0
-10
-20
-30
-40
-20
-40
-60
-80
-100
-50
V
GS
= 10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
PULSE DURATION = 80
μ
s
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 12V
V
GS
= 14V
0
-10
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-5
-20
-30
I
D
,
-40
-4
-50
V
GS
= 10V
PULSE DURATION = 80
μ
s
V
GS
= 7V
V
GS
= 4V
V
GS
= 5V
V
GS
= 6V
V
GS
= 8V
0
-4
-6
-8
-10
-2
-0.1
-1.0
-10
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-100
125
o
C
25
o
C
PULSE DURATION = 80
μ
s
V
DS
≤
-50V
-20
-40
-60
-80
r
D
,
I
D
, DRAIN CURRENT (A)
-100
0
V
GS
= -20V
V
GS
= -10V
350
300
250
200
150
100
50
0
O
)
PULSE DURATION = 80
μ
s
N
2.2
1.4
1.0
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
V
GS
= 10V, I
D
= -25A
O
IRF9150
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IRF9230 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 6.5A 3PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET, TO-3, LAW - Bulk 制造商:Rochester Electronics LLC 功能描述:HEXFET, HI-REL - Bulk 制造商:International Rectifier 功能描述:P CH MOSFET -200V 6.5A TO-2 制造商:International Rectifier 功能描述:MOSFET P TO-3 制造商:International Rectifier 功能描述:P CH MOSFET, -200V, 6.5A, TO-204AA 制造商:International Rectifier 功能描述:Single P-Channel 200 V 75 W 31 nC Hexfet Transistor Through Hole- TO-204AA 制造商:International Rectifier 功能描述:P CH MOSFET, -200V, 6.5A, TO-204AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 6.5A TO-3
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