參數(shù)資料
型號： IRF9150
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述： 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁數(shù)： 3/7頁
文件大?。?/td> 57K
代理商： IRF9150
5-22
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
-25
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-100
A
Source to Drain Diode Voltage(Note 2)
V
SD
T
C
= 25
o
C, I
SD
= 25A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
-
0.9
1.5
V
Reverse Recovery Time
t
rr
-
150
300
ns
Reverse Recovery Charge
Q
RR
0.3
0.7
1.5
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 3.2mH, R
G
= 25
,
peak I
AS
= 25A See Figures 15, 16.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
A
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
-25
-20
-15
-10
-5
-30
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
o
C
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
SINGLE PULSE
0.1
0.02
0.01
0.2
0.5
0.05
IRF9150
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