參數(shù)資料
型號(hào)： IRF9150
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述： 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 57K
代理商： IRF9150
5-21
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9150
-100
-100
-25
-18
-100
±
20
150
1.2
1300
-25
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
A
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Avalanche Current (Repetitive or Nonrepetitive) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
AR
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
300
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= -250
μ
A, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= -10A, V
GS
= -10V (Figures 8, 9)
V
DS
= -10V, I
D
= -12.5 (Figure 12)
V
DD
= -50V, I
D
≈
-25A, R
G
= 6.8
,
R
L
= 2.0
, (Fig-
ures 17, 18) MOSFET Switching Times are Essen-
tially Independent of Operating Temperature
-100
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-25
μ
A
μ
A
-
-
-250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
-25
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.09
0.150
Forward Transconductance (Note 2)
4
10
-
S
Turn-On Delay Time
-
16
24
ns
Rise Time
-
110
160
ns
Turn-Off Delay Time
-
65
100
ns
Fall Time
-
46
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= -10V, I
D
= -25A, V
DS
= 0.8 x Rated BV
DSS
(Figures 14, 19, 20) Gate Charge is Essentially
Indpendent of Operating Temperature
-
82
120
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
14
-
nC
Gate to Drain “Miller” Charge
-
42
-
nC
Input Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
2400
-
pF
Output Capacitance
-
850
-
pF
Reverse Transfer Capacitance
-
400
-
pF
Internal Drain Inductance
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source
Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
0.83
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
30
L
S
L
D
G
D
S
IRF9150
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