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參數(shù)資料
| 型號(hào)： | IRF7507 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=+-20V) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d - 20V的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | IRF7507 |
IRF7507
PD - 91269I
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
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Very Small SOIC Package
l
Low Profile (<1.1mm)
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Available in Tape & Reel
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Fast Switching
HEXFET
Power MOSFET
N-Ch
P-Ch
V
DSS
20V
-20V
R
DS(on)
0.135
0.27
12/1/98
Micro8
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Description
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
1
P-CHANNEL MOSFET
www.irf.com
1
Parameter
Max.
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 20 -20 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
2.4 -1.7
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
1.9 -1.4
I
DM
Pulsed Drain Current
19 -14
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage
± 12 V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10μS 16 V
dv/dt
Peak Diode Recovery dv/dt
5.0 -5.0
T
J
, T
STG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
A
1.25
0.8
W
W
V/ns
°C
-55 to + 150
Thermal Resistance
Parameter
Max. Units
100 °C/W
R
θ
JA
Maximum Junction-to-Ambient
Absolute Maximum Ratings
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7507HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRF7507PBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7507TR | 功能描述:MOSFET N+P 20V 1.7A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7507TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 20V 2.4A/1.7A 8-Pin Micro T/R |
| IRF7507TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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