參數(shù)資料
型號(hào)： IRF7701
廠(chǎng)商： International Rectifier
英文描述： Power MOSFET(Vdss=-12V)
中文描述： 功率MOSFET（12V的減振鋼板基本\u003d-）
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 147K
代理商： IRF7701
HEXFET
Power MOSFET
R
DS(on)
max
0.011@V
GS
= -4.5V
0.015@V
GS
= -2.5V
0.022@V
GS
= -1.8V
PD - 93940
IRF7701
Parameter
Max.
-12
±10
±8.0
±80
1.5
0.96
12
± 8.0
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
Parameter
Max.
83
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
6/21/00
HEXFET
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Description
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.1mm)
l
Available in Tape & Reel
TSSOP-8
V
DSS
I
D
-10A
-8.5A
-7.0A
-12V
4 = G
3 = S
2 = S
1 = D
1
2
3
4
G
D
S
5
6
7
8
8 = D
7 = S
6 = S
5 = D
相關(guān)PDF資料
PDF描述
IRF7702 Power MOSFET(Vdss=-12V)
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IRF7704 Power MOSFET(Vdss=-40V)
IRF7705 Power MOSFET(Vdss=-30V)
IRF7706 Power MOSFET(Vdss=-30V)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7701GPBF 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:HEXFET? Power MOSFET Ultra Low On-Resistance
IRF7701GTRPBF 功能描述:MOSFET MOSFT PCh -12V -10A 11mOhm 69nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7701HR 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -10A, 11 MOHM, 69 NC QG, TSSOP-8 - Rail/Tube
IRF7701PBF 制造商:International Rectifier 功能描述:MOSFET P TSSOP-8 制造商:International Rectifier 功能描述:MOSFET, P, TSSOP-8
IRF7701TR 功能描述:MOSFET P-CH 12V 10A 8-TSSOP RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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