- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385443 > IRF7473PBF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRF7473PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 136K |
| 代理商： | IRF7473PBF |
8/17/04
www.irf.com
1
IRF7473PbF
HEXFET Power MOSFET
Telecom and Data-Com 24 and 48V
input DC-DC converters
Motor Control
Uninterrutible Power Supply
Lead-Free
Benefits
Ultra Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved
Gate Charge Characteristic
Improved Avalanche Ruggedness and
Dynamic dv/dt
Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
Full and Half Bridge 48V input Circuit
Forward 24V input Circuit
Applications
Parameter
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
100V
R
DS(on)
max
26
m
@V
GS
= 10V
I
D
6.9A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7473 | Power MOSFET(Vdss=100V, iD=6.9A) |
| IRF7474PBF | HEXFET㈢Power MOSFET |
| IRF7474 | HEXFET Power MOSFET |
| IRF7475PBF | HEXFET Power MOSFET |
| IRF7476 | Power MOSFET(Vdss=12V, Id=15A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7473TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R |
| IRF7473TRPBF | 功能描述:MOSFET MOSFT 100V 6.9A 26mOhm 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7474 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 4.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET N SO-8 |
| IRF7474PBF | 制造商:International Rectifier 功能描述:MOSFET N SO-8 |
| IRF7474TRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。