參數(shù)資料
型號: IRF7473
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=100V, iD=6.9A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 100V的,身份\u003d 6.9A)
文件頁數(shù): 1/8頁
文件大小: 196K
代理商: IRF7473
4/27/01
www.irf.com
1
IRF7473
HEXFET
Power MOSFET
l
Telecom and Data-Com 24 and 48V
input DC-DC converters
l
Motor Control
l
Uninterrutible Power Supply
Benefits
l
Ultra Low On-Resistance
l
High Speed Switching
l
Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l
Improved Avalanche Ruggedness and
Dynamic dv/dt
l
Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l
Full and Half Bridge 48V input Circuit
l
Forward 24V input Circuit
Applications
Parameter
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
100V
R
DS(on)
max
26
m
@V
GS
= 10V
I
D
6.9A
PD- 94037A
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