參數(shù)資料
型號： IRF7413ZUPBF
廠商： International Rectifier
英文描述： HEXFT Power MOSFET
中文描述： HEXFT功率MOSFET
文件頁數(shù)： 8/10頁
文件大?。?/td> 273K
代理商： IRF7413ZUPBF
8
www.irf.com
Control FET
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&'!"#$
$ %
$(
P
loss
= P
conduction
+ P
switching
+ P
drive
+ P
output
This can be expanded and approximated by;
(
)
P
loss
=
I
rms
2
×
R
ds(on)
+
I
×
Q
gd
(
i
g
×
V
in
×
f
+
I
×
Q
gs2
i
g
×
V
in
×
f
+
Q
g
×
V
g
×
f
)
+
Q
oss
2
×
V
in
×
f
#)
&'!"#
&'!"#
#
!*
$
&+
&'!"#$
$!,
$
-
.
$
/
$
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss
=
P
conduction
+
P
drive
+
P
output
(
+
Q
g
×
V
g
×
f
(
Q
oss
2
*
P
loss
=
I
rms
2
×
R
ds(on)
)
+
×
V
in
×
f
+
Q
rr
×
V
in
×
f
(
)
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
and re-
verse recovery charge Q
both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
/Q
must be minimized to reduce the
potential for Cdv/dt turn on.
Power MOSFET Selection for Non-Isolated DC/DC Converters
Figure A: Q
oss
Characteristic
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參數(shù)描述
IRF7416 制造商:International Rectifier 功能描述:MOSFET P LOGIC SO-8
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IRF7416PBF 功能描述:MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7416PBF 制造商:International Rectifier 功能描述:MOSFET P -30V -10A SO-8 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8, Transistor Polarity:P Channel, Continuous Drain Cur 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-10A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):20mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:-1V, Power Dissipation , RoHS Compliant: Yes
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