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參數(shù)資料
| 型號(hào)： | IRF7433PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IRF7433PBF |
HEXFET
Power MOSFET
10/12/04
IRF7433PbF
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
-12
-8.9
-7.1
-36
2.5
1.6
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage
±8 V
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
-55 to +150
°C
PD - 95305
V
DSS
-12V
R
DS(on)
max
24m
@V
GS
= -4.5V
30m
@V
GS
= -2.5V
46m
@V
GS
= -1.8V
I
D
-
8.7A
-
7.4A
-
6.3A
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7433PBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2.5W |
| IRF7433TR | 功能描述:MOSFET P-CH 12V 8.9A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7433TRPBF | 功能描述:MOSFET MOSFT PCh -12V -8.9A 24mOhm 20nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7434 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRF743FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-220AB |
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