參數(shù)資料
型號: IRF7413ZUPBF
廠商: International Rectifier
英文描述: HEXFT Power MOSFET
中文描述: HEXFT功率MOSFET
文件頁數(shù): 1/10頁
文件大?。?/td> 273K
代理商: IRF7413ZUPBF
www.irf.com
1
09/14/06
IRF7413ZUPbF
HEXFET Power MOSFET
R
DS(on)
max
10m @V
GS
= 10V
Notes
through are on page 10
Benefits
Ultra-Low Gate Impedance
Very Low R
DS(on)
Fully Characterized Avalanche Voltage
and Current
100% Tested for R
G
Lead-Free
Applications
Control FET for Notebook Processor
Power
Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
Power Dissipation
Power Dissipation
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient
-55 to + 150
2.5
1.6
0.02
Max.
30
13
10
100
± 20
V
DSS
30V
I
D
13A
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