參數(shù)資料
型號: IRF6775MTRPBF
廠商: International Rectifier
英文描述: DIGITAL AUDIO MOSFET
中文描述: 數(shù)字音頻MOSFET的
文件頁數(shù): 3/10頁
文件大?。?/td> 240K
代理商: IRF6775MTRPBF
IRF6775MTRPbF
www.irf.com
3
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
0
10
20
30
40
QG Total Gate Charge (nC)
0
4
8
12
16
20
VG
VDS= 120V
VDS= 75V
VDS= 30V
ID= 5.6A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
60
μ
s PULSE WIDTH
Tj = 25°C
5.5V
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
BOTTOM
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
60
μ
s PULSE WIDTH
Tj = 150°C
5.5V
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
BOTTOM
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
ID
(
)
VDS = 25V
60
μ
s PULSE WIDTH
TJ = 150°C
TJ = 25°C
TJ = -40°C
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RD
ID = 5.6A
VGS = 10V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
相關PDF資料
PDF描述
IRF6785MTRPBF DIGITAL AUDIO MOSFET
IRF7101PBF HEXFET㈢ Power MOSFET
IRF7103IPBF HEXFET Power MOSFET
IRF7104PBF HEXFET Power MOSFET
IRF7105QPBF HEXFET Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRF6785MTR1PBF 功能描述:MOSFET MOSFT 200V 15A 100mOhm 26nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6785MTRPBF 功能描述:MOSFET 200V 1 N-CH HEXFET 100mOhms 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6794MPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET plus Schottky Diode
IRF6794MTR1PBF 功能描述:MOSFET 25V 1 N-CH HEXFET 1.7mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6794MTRPBF 功能描述:MOSFET 25V 1 N-CH HEXFET 1.7mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube