參數(shù)資料
型號(hào)： IRF6613
廠商： International Rectifier
英文描述： VCXO TCXO VCTCXO
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 233K
代理商： IRF6613
www.irf.com
1
8/18/04
IRF6613
HEXFET Power MOSFET
R
DS(on)
max
3.4m
@V
GS
= 10V
4.1m
@V
GS
= 4.5V
Notes
through are on page 2
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6613 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications
.
Application Specific MOSFETs
Ideal for Synchronous Rectification in Isolated
DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
V
DSS
40V
Qg(typ.)
42nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
A
W
mJ
A
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
°C/W
-40 to + 150
0.022
1.8
200
18
89
2.8
Max.
40
23
18
180
±20
150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6613TR1 功能描述:MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6613TR1PBF 功能描述:MOSFET MOSFT 40V 150A 3.4mOhm 42nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6613TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6613TRPBF 功能描述:MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6614 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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