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參數(shù)資料
| 型號(hào)： | IRF6602 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | IRF6602 |
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 2.5mH
R
G
= 25
, I
AS
= 8.8A. (See Figure 14).
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
03/04
DirectFET
Part Marking
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6602TR1 | HEXFET Power MOSFET |
| IRF6603 | HEXFETPower MOSFET |
| IRF6613 | VCXO TCXO VCTCXO |
| IRF6616 | DirectFET Power MOSFET |
| IRF6618PBF | DirectFET㈢Power MOSFET ㈢ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6602TR1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF6603 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6603TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6604 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6604TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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