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參數(shù)資料
| 型號(hào)： | IRF6601 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET⑩ Power MOSFET(Vdss=20V) |
| 中文描述： | ⑩的DirectFET功率MOSFET（減振鋼板基本\u003d 20V的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | IRF6601 |
Symbol
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
www.irf.com
Parameter
Typ.
–––
–––
–––
–––
–––
Max.
35
12.5
20
3.0
1.0
Units
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB mounted
°C/W
DirectFET
TM
Power MOSFET
R
DS(on)
max
3.8m
@V
GS
= 10V
5.0m
@V
GS
= 4.5V
IRF6601
Parameter
Max.
20
85
26
20
200
3.6
2.3
42
28
±20
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25
°
C
P
D
@T
A
= 70
°
C
P
D
@T
C
= 25
°
C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/
°
C
V
°
C
V
GS
T
J,
T
STG
Thermal Resistance
-55 to + 150
Absolute Maximum Ratings
1
he IRF6601 combines the latest HEXFET
Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Description
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with exisiting Surface Mount
Techniques
DirectFET
ISOMETRIC
V
DSS
20V
I
D
26A
21A
PD - 94366C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRF6602 | 功能描述:MOSFET N-CH 20V 11A DIRECTFET RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF6602TR1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF6603 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6603TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6604 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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