參數(shù)資料
型號(hào)： IRF614
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 2.0A, 250V, 2.0 Ohm,N-Channel Power MOSFET(2.0A, 250V, 2.0 Ω,N溝道增強(qiáng)型功率MOSFET)
中文描述： 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 45K
代理商： IRF614
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF614
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250
V
250
V
2.0
1.3
A
A
8.0
A
±
20
V
20
W
0.16
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . T
pkg
61
mJ
o
C
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A, (Figure 10)
250
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
-
-
250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
2.0
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 2.5A, (Figures 8, 9)
-
1.6
2.0
A
Forward Transconductance (Note 2)
g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 2.5A,
(Figure 12)
0.8
1.2
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5 x Raterd BV
DSS
, I
D
≈
2.0A, R
L
= 61
V
GS
= 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-
8.9
13
ns
Rise Time
t
r
-
12
18
ns
Turn-Off Delay Time
t
d(OFF)
-
18
27
ns
Fall Time
t
f
-
8.9
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 2.0A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
-
9.6
14.4
nC
Gate to Source Charge
Q
gs
-
2.4
3.6
nC
Gate to Drain “Miller” Charge
Q
gd
-
4.5
6.7
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
180
-
pF
Output Capacitance
C
OSS
-
53
-
pF
Reverse Transfer Capacitance
C
RSS
-
14
-
pF
IRF614
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