- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384488 > IRF2204LPBF (International Rectifier) HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A ) PDF資料下載
參數(shù)資料
| 型號： | IRF2204LPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A ) |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 40V的，的RDS（on）\u003d 3.6米ヘ，身份證\u003d 170A章） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | IRF2204LPBF |
IRF2204S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
40
–––
–––
0.041 –––
–––
3.0
2.0
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
–––
35
–––
39
–––
15
–––
140
–––
62
–––
110
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 130A
V
DS
= 10V, I
D
= 250μA
V
DS
= 10V, I
D
= 130A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 130A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 130A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
3.6
4.0
–––
20
250
200
-200
200
52
59
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5890
1570
130
8000
1370
2380
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 130A, V
GS
= 0V
T
J
= 25°C, I
F
= 130A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
68
120
1.3
100
180
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
170
850
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF2204SPBF | HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A ) |
| IRF2805LPbF | HEXFET Power MOSFET |
| IRF2805SPBF | HEXFET Power MOSFET |
| IRF2805L | ER 4C 4#12 PIN RECP WALL |
| IRF2805S | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF2204PBF | 功能描述:MOSFET MOSFT 40V 210A 3.6mOhm 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2204S | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK |
| IRF2204SPBF | 功能描述:MOSFET MOSFT 40V 170A 3.6mOhm 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2204STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB |
| IRF2204STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。