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參數(shù)資料
| 型號： | IRF2805L |
| 廠商： | International Rectifier |
| 英文描述： | ER 4C 4#12 PIN RECP WALL |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 224K |
| 代理商： | IRF2805L |
Parameter
Max.
135
96
700
200
1.3
± 20
380
1220
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
V/ns
2.0
-55 to + 175
300 (1.6mm from case )
°C
HEXFET
Power MOSFET
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 4.7m
I
D
= 135A
06/10/02
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94428
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
Typical Applications
Climate Control
ABS
Electronic Braking
Windshield Wipers
●
●
●
●
IRF2805S
IRF2805L
D
2
Pak
IRF2805S
TO-262
IRF2805L
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, steady state)**
°C/W
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|---|---|
| IRF2805S | AUTOMOTIVE MOSFET |
| IRF2807LPbF | HEXFET Power MOSFET |
| IRF2807SPBF | HEXFET Power MOSFET |
| IRF2807L | HEXFET Power MOSFET |
| IRF2807S | HEXFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF2805LPBF | 功能描述:MOSFET MOSFT 55V 135A 4.7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2805PBF | 功能描述:MOSFET MOSFT 55V 175A 4.7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2805S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRF2805SPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF2805STRLPBF | 功能描述:MOSFET MOSFT 55V 135A 4.7mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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