參數(shù)資料
型號： IRF1407PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 171K
代理商： IRF1407PBF
IRF1407PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
75
–––
–––
0.09
–––
––– 0.0078
2.0
–––
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
–––
35
–––
54
–––
11
–––
150
–––
150
–––
140
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 78A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 78A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 78A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 78A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0KHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0KHz
V
GS
= 0V, V
DS
= 60V, = 1.0KHz
V
GS
= 0V, V
DS
= 0V to 60V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
S
4.0
–––
20
250
200
-200
250
52
81
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5600
890
190
5800
560
1100
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 78A, V
GS
= 0V
T
J
= 25°C, I
F
= 78A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
110
390
1.3
170
590
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
130
520
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.13mH
R
G
= 25
, I
AS
= 78A. (See Figure 12).
I
SD
≤
78A, di/dt
≤
320A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
相關(guān)PDF資料
PDF描述
IRF1503PBF AUTOMOTIVE MOSFET
IRF1607 Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
IRF2204 AUTOMOTIVE MOSFET
IRF2804S-7P AUTOMOTIVE MOSFET
IRF2807PBF Advanced Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1407S 功能描述:MOSFET N-CH 75V 100A D2PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRF1407SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK
IRF1407SPBF 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 75V 100A D2-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 75V 100A D2PAK
IRF1407STRL 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-Pak
IRF1407STRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*