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參數(shù)資料
| 型號： | IRF1607 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d 0.0075ohm，身份證\u003d 142A） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 234K |
| 代理商： | IRF1607 |
Parameter
Max.
142
100
570
380
2.5
± 20
1250
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
5.2
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 75V
R
DS(on)
= 0.0075
I
D
= 142A
Description
9/4/01
www.irf.com
1
G
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
G
G
G
G
G
Benefits
Typical Applications
42 Volts Automotive Electrical Systems
Electrical Power Steering (EPS)
Integrated Starter Alternator
G
G
G
AUTOMOTIVE MOSFET
TO-220AB
PD -94158
IRF1607
Parameter
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1607HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 142A 3-Pin(3+Tab) TO-220AB |
| IRF1607PBF | 功能描述:MOSFET MOSFT 75V 142A 7.5mOhm 210nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1704 | 功能描述:MOSFET N-CH 40V 170A TO-220AB RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF1730G | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A) |
| IRF1902 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V) |
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