參數(shù)資料
型號(hào)： IRF1407PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 1/10頁
文件大?。?/td> 171K
代理商： IRF1407PBF
Parameter
Max.
130
92
520
330
2.2
± 20
390
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
S
D
G
V
DSS
= 75V
R
DS(on)
= 0.0078
I
D
= 130A
Description
www.irf.com
1
O
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
O
O
O
O
O
Benefits
Typical Applications
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
O
O
O
AUTOMOTIVE MOSFET
TO-220AB
PD - 95485
IRF1407PbF
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1407S 功能描述:MOSFET N-CH 75V 100A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF1407SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK
IRF1407SPBF 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 100A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 75V 100A D2-PAK 制造商:International Rectifier 功能描述:MOSFET N-Channel 75V 100A D2PAK
IRF1407STRL 制造商:International Rectifier 功能描述:MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-Pak
IRF1407STRLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R
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