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參數(shù)資料
| 型號(hào)： | IRF1407LPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) |
| 中文描述： | ㈢的HEXFET功率MOSFET（減振鋼板基本\u003d 75V的，的RDS（on）\u003d 0.0078ヘ，身份證\u003d 100號(hào)A） |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 262K |
| 代理商： | IRF1407LPBF |
IRF1407S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
75
–––
–––
0.09
–––
––– 0.0078
2.0
–––
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
–––
35
–––
54
–––
11
–––
150
–––
150
–––
140
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 78A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 78A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 78A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 78A
R
G
= 2.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0KHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0KHz
V
GS
= 0V, V
DS
= 60V, = 1.0KHz
V
GS
= 0V, V
DS
= 0V to 60V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
S
4.0
–––
20
250
200
-200
250
52
81
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5600
890
190
5800
560
1100
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 78A, V
GS
= 0V
T
J
= 25°C, I
F
= 78A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
110
390
1.3
170
590
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
100
520
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.13mH
R
G
= 25
, I
AS
= 78A. (See Figure 12).
I
SD
≤
78A, di/dt
≤
320A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Uses IRF1407 data and test conditions.
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